
辜海彬,教授,博士生導(dǎo)師,四川省學(xué)術(shù)和技術(shù)帶頭人后備人選,四川省海外高層次留學(xué)人才,波爾多大學(xué)分子科學(xué)研究所訪問學(xué)者,中國皮革協(xié)會科技委員會委員,四川省皮革學(xué)會常務(wù)理事,中文核心期刊《皮革科學(xué)與工程》編委和責(zé)任編輯,2008年博士畢業(yè)于四川大學(xué),師從陳武勇教授(國家級教學(xué)名師)。主持及主研國家自然科學(xué)基金、教育部博士點基金、科技部國際科技合作項目、四川省國際科技合作項目等多項研究項目。迄今為止,以第一作者或通訊作者身份在Angew. Chem.-Int. Edit.、Prog. Polym. Sci.、Coord. Chem. Rev.、Adv. Funct. Mater.、Chem. Eng. J.、J. Mater. Sci. Technol.、ACS Sustain. Chem. Eng.、ACS Appl. Mater. Interfaces、Carbohydr. Polym.、Macromolecules等期刊上發(fā)表學(xué)術(shù)論文120余篇, 其中, 高被引論文20篇,熱點論文4篇,總被引用達(dá)2500余次。
聯(lián)系方式:guhaibing@scu.edu.cn
研究方向:
1. 生物質(zhì)基智能可穿戴柔性傳感材料(電子皮膚、運動健康監(jiān)測等)
2. 生物質(zhì)基碳量子點功能材料(防偽、加密、化學(xué)傳感、催化等)
3. 功能及智能皮革(抗菌、防霉、芳香、透明、導(dǎo)電、防偽、變色等)
4. 制革化學(xué)及工藝學(xué)
代表性論文:
1. X. Fan, T. Ke, H. B. Gu*. Multifunctional, Ultra-Tough Organohydrogel E-Skin Reinforced by Hierarchical Goatskin Fibers Skeleton for Energy Harvesting and Self-Powered Monitoring. Adv. Funct. Mater. 2023, 33(42), 2304015.
2. R. R. Zhao, J. X. Luo, T. Ke, J. W. Zhang, D. Astruc, J. Zhou*, H. B. Gu*. Ultra-Tough, highly stable and Self-Adhesive Goatskin-Based intelligent Multi-Functional organogel e-skin as Temperature, Humidity, Strain, and bioelectric four-mode sensors for health monitoring. Chem. Eng. J. 2024, 485, 149816.
3. B. Song, X. Fan, J. L. Shen, H. B. Gu*. Ultra-stable and self-healing coordinated collagen-based multifunctional double-network organohydrogel e-skin for multimodal sensing monitoring of strain-resistance, bioelectrode, and self-powered triboelectric nanogenerator. Chem. Eng. J. 2023, 474, 145780.
4. B. Song, X. D. Dai, X. Fan, H. B. Gu*. Wearable multifunctional organohydrogel-based electronic skin for sign language recognition under complex environments. J. Mater. Sci. Technol. 2024, 181, 91-103.
5. T. Ke, L. Zhao, X. Fan, H. B. Gu*. Rapid self-healing, self-adhesive, anti-freezing, moisturizing, antibacterial and multi-stimuli-responsive PVA/starch/tea polyphenol-based composite conductive organohydrogel as flexible strain sensor. J. Mater. Sci. Technol. 2023, 135, 199-212.